PART |
Description |
Maker |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. Transistors
|
Usha India Ltd.
|
PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
2SD874A |
Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
2SB1589 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030S |
Extremely low collector-to-emitter saturation voltage 极低的集电极到发射极饱和电压
|
AUK, Corp. AUK[AUK corp]
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|